PART |
Description |
Maker |
MPXAZ4115A |
Media Resistant,Integrated Silicon Pressure Sensor for Manifold Absolute Pressure,Altemeter or Barometer Applications On-Chip Signal Conditioned From old datasheet system MPXAZ4115A Media Resistant, Integrated Silicon Pressure Sensor for Manifold Absolute Pressure, Altimeter or Barometer Applications On-Chip Signal Conditioned, Temperature Compensated, and Calibrated
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Motorola, Inc.
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MPXHZ6115A |
(MPXHZ6115A / MPXHA6115A) Media Resistant and High Temperature Accuracy Integrated Silicon Pressure Sensor
|
Motorola
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MPXHZ6130A10 MPXHZ6130A MPXHZ6130A6U MPXHZ6130AC6U |
Media Resistant and High Silicon Pressure Sensor for Measuring Absolute Pressure
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Freescale Semiconductor, Inc
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FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射,抗SEGR N沟道功率MOSFET(抗辐射沟道马鞍山场效应管) Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
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INTERSIL[Intersil Corporation] Intersil, Corp.
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FSL913A0D FSL913A0D1 FSL913A0D3 FSL913A0R FSL913A0 |
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF 7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7A 100V的,0.300欧姆,拉德硬,SEGR性,P通道功率MOSFET 7A/ -100V/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs 5A/ -100V/ 0.680 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
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Intersil, Corp. INTERSIL[Intersil Corporation]
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FSYC260R4 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FS |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 46 A, 200 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射,抗SEGR N沟道功率MOSFET
|
INTERSIL[Intersil Corporation] Intersil, Corp.
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FSS430R4 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R |
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 3 A, 500 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 3A00V.70欧姆,拉德硬,SEGR耐,N沟道功率MOSFET 3A/ 500V/ 2.70 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
Intersil, Corp. INTERSIL[Intersil Corporation] http://
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FSPYE230D1 FSPYE230F FSPYE230F4 FSPYE230R4 FN4852 |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 12 A, 200 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
FSL9130R FN4083 FSL9130R4 FSL9130D FSL9130D1 FSL91 |
5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 5 A, 100 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF CAP 1000UF 200V ELECT TS-HB 5 A, 100 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF From old datasheet system 5A/ -100V/ 0.680 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs 7A/ -100V/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp. INTERSIL[Intersil Corporation]
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FSGYE230R4 FSGYE230D1 FSGYE230R FSGYE230R3 FN4853 |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
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FSYE923A0R4 FSYE923A0D FSYE923A0D1 FSYE923A0D3 FSY |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 6 A, 200 V, 1.18 ohm, P-CHANNEL, Si, POWER, MOSFET
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Intersil, Corp. INTERSIL[Intersil Corporation]
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